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题名/责任者:

Handbook of silicon carbide materials and devices / edited by Zhe Chuan Feng.

版本说明:

First edition.

出版发行项:

Boca Raton : CRC Press, [2023]

ISBN:

9780367188269

ISBN:

9781032383576

载体形态项:

xix, 444 pages : illustrations ; 26 cm.

其他载体形态:

Online version: Handbook of silicon carbide materials and devices First edition Boca Raton : CRC Press, 2023 9780429198540

丛编说明:

Series in materials science & engineering

附加个人名称:

Feng, Zhe Chuan, editor.

论题主题:

Electronics-Materials.

论题主题:

Silicon carbide-Electric properties.

论题主题:

Semiconductor films.

论题主题:

Epitaxy.

中图法分类号:

TN304.2

书目附注:

Includes bibliographical references and index.

摘要附注:

"This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homo-epitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs"--

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